Improve the Performance of SONOS Type UV TD Sensors Using IOHAOS with Enhanced UV Transparency ITO Gate

This research demonstrates that an indium tin oxide–silicon oxide–hafnium aluminum oxide‒silicon device with enhanced UV transparency ITO gate (hereafter E-IOHAOS) can greatly increase the sensing response performance of a SONOS type ultraviolet radiation total dose TD) sensor. Post annealing process is used to optimize optical transmission and electrical resistivity characterization in film. Via nano-columns (NCols) crystalline transformation film, film be enhanced. causes threshold voltage VT E-IOHAOS increase, also related TD. The experimental results show under TD irradiation 100 mW·s/cm2, light change 12.5 V. Moreover, fading rate ten-years retention on below 10%. almost 1.25 times poly silicon–aluminum silicon SAHAOS). sensor improved by annealed gate.